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| BV |
Isolation Voltage |
POUT |
Output Power |
| BW |
Bandwidth |
PSAT |
Saturation Output Power |
| CCB |
Collector to Base Capacitance |
PT |
Total Power Dissipation |
| CG |
Conversion Gain |
PTEST |
Power Output at Test Point |
| CM |
Cross Modulation of Common Mode |
Rg |
Gate Resistance |
| BVCER |
Collector-Emitter Breakdown Voltage |
RLIN |
Input Return Loss |
| BVCEO |
Collector-Emitter Breakdown Voltage |
RLOUT |
Output Return Loss |
| BVCBO |
Collector-Base Breakdown Voltage |
RTH |
Thermal Resistance |
| BVEBO |
Emitter-Base Breakdown Voltage |
RTH(J-C) |
Thermal Resistance (Junction to Case) |
| COB |
Output Capacitance |
RTH(J-A) |
Thermal Resistance (Junction to Ambient) |
| CRE |
Common Emitter Reverse Transfer Capacitance |
RTH(CH-C) |
Thermal Resistance (Channel to Case) |
| Duty |
Duty Cycle |
RTH(CH-A) |
Thermal Resistance (Channel to Ambient) |
| fT |
Unity Gain Bandwidth Product |
TA |
Ambient Temperature |
| fIN |
Input Frequency |
TC |
Case Temperature |
| fMAX |
Maximum Frequency of Oscillation |
TCH |
Channel Temperature |
| fSTB |
Oscillator Frequency Stability |
tf |
Fall Time |
| fOP |
Operating Frequency |
TJ |
Junction Temperature |
| GA |
Associated Gain |
ton |
Turn-on time |
| G1DB |
Gain at P1dB |
toff |
Turn-off time |
| GL |
Linear Gain |
tr |
Rise Time |
| GM |
Transconductance |
TSET |
Laser Set Temperature |
| GP |
Power Gain |
TSTG |
Storage Temperature |
| hFE |
Forward Current Gain |
TSOL |
Soldering Temperature |
| IC |
Collector Current |
VAGC |
Automatic Gain Control Voltage (Si MMICs) |
| ICBO |
Collector Cutoff Current |
VCONT |
Control Voltage (Si
& GaAs Ics) |
| ICC |
Supply Current |
VCC |
Silicon Collector Supply Voltage |
| ID |
Monitor Dark Current (Laser) |
VEE |
Silicon Emitter Supply Voltage |
| IDD |
Supply Current (drain for GaAs) |
VCBO |
Collector to Base Voltage |
| IDS |
Drain to Source Current |
VCEO |
Collector to Emitter Voltage (Open) |
| IDSS |
Saturated Drain to Source Current |
VCER |
Collector to Emitter Voltage with Resistor |
| IDQ |
Quiescent Drain Current |
VDD |
GaAs Drain Supply Voltage |
| IEBO |
Emitter Cutoff Current |
VDS |
Drain to Source Voltage |
| IEE |
Supply Current (emitter for Silicon) |
VDSX |
Drain to Source Voltage w/SpecificGate Voltage |
| IF |
Intermediate Frequency (prescalers) |
VEBO |
Emitter to Base Voltage |
| IFH |
High Level Input Current |
VG1S |
Gate 1 to Source Voltage |
| IFL |
Low Level Input Current |
VGD |
Gate to Drain Voltage |
| IG |
Gate Current |
VGDO |
Gate to Drain Voltage Terminal Open |
| IGF |
Forward Gate Current |
VGS |
Gate to Source Voltage |
| IGRF |
Gate Current with RF on |
VGSO |
Gate to Source Voltage Terminal Open |
| IGSO |
Gate to Source Leakage Current |
VID |
Differential Input Voltage |
| IMD |
Intermodulation Distortion |
VIN |
Input Voltage |
| IM2 |
Second Order Intermodulation Distortion |
VO |
Output Voltage |
| IM3 |
Third Order Intermodulation Distortion |
VOSC |
Vcc at OSC Stop |
| IO |
Output Current |
VP |
Pinch Off Voltage |
| IOP |
Operating Current |
VTXD |
Data Input Voltage |
| IM |
Monitor Current |
VR |
Reverse Voltage |
| ISOL |
Isolation |
VRXD |
Data Output Voltage |
| ISS |
Sink Current |
VSWR |
Voltage Standing Wave Ratio |
| ITH |
Threshold Current |
∆GL or ∆GS |
Gain Flatness |
| MAG |
Maximum Available Gain |
ηADD |
Power Added Efficiency |
| NF |
Noise Figure |
ηC |
Collector Efficiency |
| NFMIN |
Minimum Noise Figure |
s |
Spectrum Width |
| NFOPT |
Optimum Noise Figure |
|S11| |
Input Return Loss |
| P1dB |
Output Power at 1dB Gain Compression Point |
|S21|2 |
Insertion Power Gain |
| PD |
Power Dissipation |
S21E|2 |
Insertion Power Gain (common emitter) |
| pF |
Picofarad |
|S21S|2 |
Forward Insertion Gain |
| Pf |
Output Power from Fiber |
|S22| |
Output Return Loss |
| PIN |
RF Input Power |
λ |
Center Emission Wavelength |
| Pt |
Optical Output from Fiber |
λp |
Peak Emission Wavelength |
| POSC |
Oscillator Power Output at VCE |
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