RF Semiconductors
Solutions: GPS LNA
Block Diagram | Components | Application Notes | Quality and Environmental |
Renesas‘ newest LNA ICs for GPS front-ends are manufactured using Renesas‘ advanced UHS4 SiGe:C process. Each device includes a robust band-gap voltage regulator, a power-saving "enable" function, and on-chip ESD protection.
Block Diagram
Components
| Component | Part No. | Description | |||
|---|---|---|---|---|---|
| LNA | UPC8211TK | SiGe LNA IC | |||
| LNA | UPC8231TK | SIGE LNA for GPS/Mobile Communication | |||
| LNA | UPC8233TK | SiGe:C MMIC, 1.8 to 3.3V operation | |||
| LNA | UPC8236T6N | SiGe:C Low Noise Amplifier For GPS | |||
Application Notes
Market Sheets
Quality and Environmental
China RoHS letter EU REACH - Renesas products EU RoHS Compliance Letter Halogen-free Notification - Renesas Products Renesas Electronics Optical/Microwave Semiconductor Devices Quality and Reliability Renesas Pb-Free Semiconductor Products Policies & Specifications Renesas Pb-Free Semiconductors & RoHS Compliance Renesas Pb-Free Semiconductors: Questions & Answers Tin Whisker Test Report
