RF Semiconductors
Solutions: DBS Low Noise Block
Block Diagram | Components | Quality and Environmental |
Renesas High Performance, Low Noise HJ-FETS, High Gain SiGe Transistors, Si IC IF Amplifiers, and Industry-Leading Low-Loss GaAs Switches provide a complete solution for DBS LNB manufacturers. Available NOW, through California Eastern Laboratories.
Block Diagram
Components
| Component | Part No. | Description | |||
|---|---|---|---|---|---|
| HJ-FET | NE3503M04 | Super Low Noise Pseudomorphic HJ FET (See -A part # for Pb-Free) | |||
| HJ-FET | NE3511S02 | Super Low Noise Pseudomorphic HJ FET | |||
| HJ-FET | NE3512S02 | Super Low Noise Pseudomorphic HJ FET | |||
| HJ-FET | NE3514S02 | Super Low Noise Pseudomorphic HJ FET | |||
| Si IC Amplifiers | UPC2712TB | Silicon MMIC Wideband Amplifier | |||
| Si IC Amplifiers | UPC3223TB | Silicon MMIC Wideband Amplifier | |||
| Si IC Amplifiers | UPC3224TB | Silicon MMIC Wideband Amplifier | |||
| Si IC Amplifiers | UPC3232TB | Silicon MMIC Wideband Amplifier | |||
| Si IC Amplifiers | UPC3236TK | 5 V, Silicon Germanium MMIC Medium Output Power Amplifier | |||
| Si IC Amplifiers | UPC3239TB | 3.3 V, Silicon MMIC Medium Output Power Amplifier | |||
| Si Transistors | NE662M04 | Silicon NPN transistor, 1.3dB noise figure, 15dB gain | |||
| Si Transistors | NESG2031M05 | NPN Silicon Germanium Amp and Oscillator | |||
| Si Transistors | NESG3031M05 | SiGe HBT, 0.6dB noise figure, 16dB gain, M05 pkg | |||
| Si Transistors | NESG3031M14 | SiGe HBT, 0.6dB noise figure, 16dB gain, M14 pkg | |||
Quality and Environmental
China RoHS letter EU REACH - Renesas products EU RoHS Compliance Letter Halogen-free Notification - Renesas Products Renesas Electronics Optical/Microwave Semiconductor Devices Quality and Reliability Renesas Pb-Free Semiconductor Products Policies & Specifications Renesas Pb-Free Semiconductors & RoHS Compliance Renesas Pb-Free Semiconductors: Questions & Answers Tin Whisker Test Report
